| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Mounting Type | Through Hole |
| Package / Case | 14-DIP (0.300, 7.62mm) |
| Surface Mount | NO |
| Number of Pins | 14 |
| Operating Temperature | 0°C~70°C |
| Packaging | Tube |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Subcategory | Operational Amplifier |
| Max Power Dissipation | 680mW |
| Technology | BIPOLAR |
| Terminal Position | DUAL |
| Number of Functions | 4 |
| Supply Voltage | 15V |
| Base Part Number | TL084 |
| Pin Count | 14 |
| Power Supplies | +-15V |
| Number of Channels | 4 |
| Operating Supply Current | 1.4mA |
| Nominal Supply Current | 11.2mA |
| Slew Rate | 13V/μs |
| Architecture | VOLTAGE-FEEDBACK |
| Amplifier Type | J-FET |
| Common Mode Rejection Ratio | 70 dB |
| Current - Input Bias | 30pA |
| Voltage - Supply, Single/Dual (±) | 7V~36V ±3.5V~18V |
| Input Offset Voltage (Vos) | 15mV |
| Bandwidth | 3MHz |
| Neg Supply Voltage-Nom (Vsup) | -15V |
| Unity Gain BW-Nom | 3000 kHz |
| Voltage Gain | 106.02dB |
| Average Bias Current-Max (IIB) | 0.01μA |
| Low-Offset | NO |
| Frequency Compensation | YES |
| Supply Voltage Limit-Max | 18V |
| Voltage - Input Offset | 3mV |
| Low-Bias | YES |
| Micropower | NO |
| Programmable Power | NO |
| Dual Supply Voltage | 9V |
| Neg Supply Voltage-Max (Vsup) | -18V |
| Nominal Gain Bandwidth Product | 3MHz |
| Max I/O Voltage | 15mV |
| Input Offset Current-Max (IIO) | 0.002μA |
| Height | 5.08mm |
| Length | 19.3mm |
| Width | 6.35mm |
| Thickness | 3.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The TL084CN JFET-input operational amplifier family is intended to provide more options than any other operational amplifier family previously produced. Each of these monolithic integrated circuits with JFET input combines well-matched, high-voltage JFET and bipolar transistors.
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