| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Package / Case | Nonstandard SMD |
| Transistor Element Material | GALLIUM ARSENIDE |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Gold (Au) |
| Voltage - Rated | 5V |
| Additional Feature | LOW NOISE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Current Rating | 120mA |
| Frequency | 500MHz~18GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Current - Test | 30mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | MESFET |
| Gain | 6.5dB |
| Power - Output | 24.5dBm |
| FET Technology | METAL SEMICONDUCTOR |
| Noise Figure | 1.8dB |
| Voltage - Test | 3V |
| Feedback Cap-Max (Crss) | 0.1 pF |
| RoHS Status | RoHS Compliant |