| Parameters | |
|---|---|
| Power - Output | 150W | 
| FET Technology | METAL-OXIDE SEMICONDUCTOR | 
| Power Dissipation-Max (Abs) | 300W | 
| Voltage - Test | 28V | 
| RoHS Status | RoHS Compliant | 
| Lead Free | Lead Free | 
| Mount | Screw | 
| Number of Pins | 4 | 
| Transistor Element Material | SILICON | 
| Pbfree Code | yes | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Voltage - Rated | 65V | 
| Subcategory | FET General Purpose Power | 
| Terminal Position | RADIAL | 
| Terminal Form | FLAT | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Current Rating | 16A | 
| Frequency | 150MHz | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Pin Count | 4 | 
| Qualification Status | Not Qualified | 
| Operating Temperature (Max) | 200°C | 
| Number of Elements | 1 | 
| Configuration | SINGLE | 
| Operating Mode | ENHANCEMENT MODE | 
| Current - Test | 250mA | 
| Transistor Application | AMPLIFIER | 
| Polarity/Channel Type | N-CHANNEL | 
| Continuous Drain Current (ID) | 16A | 
| Gate to Source Voltage (Vgs) | 40V | 
| Gain | 15 dB | 
| Drain to Source Breakdown Voltage | 65V |