IPW90R120C3
| Parameters | |
|---|---|
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 24 ns |
| Turn-Off Delay Time | 400 ns |
| Continuous Drain Current (ID) | 36A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 900V |
| Pulsed Drain Current-Max (IDM) | 96A |
| Dual Supply Voltage | 900V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 120mOhm |
| Rds On Max | 120 mΩ |
| Nominal Vgs | 3 V |
| Capacitance - Input | 6.8nF |
| Height | 21.1mm |
| Length | 16.13mm |
| Width | 5.21mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Pbfree Code | yes |
| Number of Terminations | 3 |
| Termination | Through Hole |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 417W |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 417W |
| Turn On Delay Time | 70 ns |
| Voltage - Threshold | 3V |
| Transistor Application | SWITCHING |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 900V |
See Relate Datesheet