HIP2100IR
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 16-VQFN Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 16 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | QUAD |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Terminal Pitch | 0.8mm |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2100 |
| Pin Count | 16 |
| JESD-30 Code | S-PQCC-N16 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.045 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 4V 7V |
| Turn Off Time | 0.045 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1mm |
| Length | 5mm |
| Width | 5mm |
| RoHS Status | Non-RoHS Compliant |
HIP2100IR Overview
For greater flexibility, the 16-VQFN Exposed Pad package is adopted.A packaging method of Tube is used.This device is equipped with 2 drivers for its configuration.The device is mounted in the direction of Surface Mount.WGate driversh a 9V~14V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.There is a gate type of N-Channel MOSFET in this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Its configuration is based on a total of 16 terminations.Under its base part number HIP2100, various related parts can be found.In addition, it is specifically designed to operate with a supply voltage of 12V.The number of component pins is 16.Maximum (Bootstrap) voltage can be up to 114V.
HIP2100IR Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2100IR Applications
There are a lot of Renesas Electronics America Inc. HIP2100IR gate drivers applications.
- General Purpose 3-Phase Inverter
- Uninterruptible Power Supplies (UPS)
- AC-DC Inverters
- Pulse transformer drivers
- High-voltage isolated DC-DC converters
- Smart Phones
- High frequency line drivers
- Portable computers
- Active filtering
- RGB applications