HIP2100IBZT
| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2100 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.045 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 4V 7V |
| Turn Off Time | 0.045 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1.75mm |
| Length | 4.9mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
HIP2100IBZT Overview
Gate drivers provides greater flexibilGate driversy to use the 8-SOIC (0.154, 3.90mm Width) package.A packaging method of Cut Tape (CT) is indicated.The configuration is supported by 2 drivers.Ideally, it should be mounted in the direction of Surface Mount.When the supply voltage is set to 9V~14V, it can demonstrate its superiority.Gate type N-Channel MOSFET has been used in its design.Mosfet driver is possible to use this device at temperatures as low as -55°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration starts with 8 terminations.There are various related parts under its base part number HIP2100.In addition, it is specifically designed to operate with a supply voltage of 12V.On the board, there are 8 component pins.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.
HIP2100IBZT Features
Embedded in the Cut Tape (CT) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2100IBZT Applications
There are a lot of Renesas Electronics America Inc. HIP2100IBZT gate drivers applications.
- Power factor correction (PFC) circuits
- High-speed communications
- General Purpose 3-Phase Inverter
- Motor Control
- Portable Media Players
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Uninterruptible Power Supplies (UPS)
- Motor Controls
- Isolated switch mode power supplies (SMPS)
- AC-DC Inverters