HIP2100EIBZ
| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2100 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.045 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 4V 7V |
| Turn Off Time | 0.045 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1.68mm |
| Length | 4.89mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
HIP2100EIBZ Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.Gate drivers is package in Tube case.2 drivers are incorporated for its configuration.The device is mounted in the direction of Surface Mount.Using a 9V~14V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Its configuration is based on a total of 8 terminations.Numerous related parts can be found under its base part number HIP2100.This device operates with 12V supply voltage.8 pins are present on the component.There can be a voltage up to 114V on the high-side (Bootstrap).
HIP2100EIBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2100EIBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2100EIBZ gate drivers applications.
- High current laser/LED systems
- Motor Drives
- Pulse transformer drivers
- Portable Media Players
- Video amplifiers
- UPS systems
- Motor Controls
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Portable Navigation Devices
- Refrigerator