| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 3W |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Dual |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Transistor Type | PNP + Diode (Isolated) |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 150mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Current - Collector (Ic) (Max) | 4.4A |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -10mV |
| Max Breakdown Voltage | 12V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -4A |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |