| Parameters | |
|---|---|
| Power - Max | 1.8W |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 4.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 1022pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Gate Charge (Qg) (Max) @ Vgs | 29.6nC @ 10V |
| Rise Time | 6.5ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 21.4 ns |
| Turn-Off Delay Time | 37.1 ns |
| Continuous Drain Current (ID) | 5.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 73.992255mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 45mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2.1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5.5A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Turn On Delay Time | 3.8 ns |