| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Package / Case | TO-252-3 |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 20mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2.15W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 18.4A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 4.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.2 ns |
| Transistor Application | SWITCHING |
| Rise Time | 6.1ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 20.2 ns |
| Turn-Off Delay Time | 38.1 ns |
| Continuous Drain Current (ID) | 18.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 66A |
| Input Capacitance | 1.89nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 30mOhm |
| Rds On Max | 20 mΩ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |