| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Gull Wing |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 210mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 1.3W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3.1A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | ZXMHC3A01T8 |
| Pin Count | 8 |
| Number of Elements | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| FET Type | 2 N and 2 P-Channel (H-Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 120m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A 2A |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
| Rise Time | 2.3ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 2.3 ns |
| Turn-Off Delay Time | 12.1 ns |
| Continuous Drain Current (ID) | 3.1A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2.7A |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.6mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |