| Parameters | |
|---|---|
| Pbfree Code | no |
| Vgs (Max) | ±40V |
| Part Status | Active |
| Fall Time (Typ) | 3.78 ns |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Turn-Off Delay Time | 17.5 ns |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Continuous Drain Current (ID) | 205mA |
| Resistance | 14Ohm |
| Gate to Source Voltage (Vgs) | 40V |
| Terminal Finish | Matte Tin (Sn) |
| Drain Current-Max (Abs) (ID) | 0.205A |
| Drain to Source Breakdown Voltage | -285V |
| Subcategory | Other Transistors |
| Height | 1.6mm |
| Voltage - Rated DC | -250V |
| Length | 4.6mm |
| Width | 2.6mm |
| Technology | MOSFET (Metal Oxide) |
| Radiation Hardening | No |
| Terminal Position | SINGLE |
| REACH SVHC | No SVHC |
| Terminal Form | FLAT |
| RoHS Status | ROHS3 Compliant |
| Peak Reflow Temperature (Cel) | 260 |
| Lead Free | Lead Free |
| Current Rating | -200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.2W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 1.53 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 17 Weeks |
| Rds On (Max) @ Id, Vgs | 14 Ω @ 200mA, 10V |
| Mount | Surface Mount |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 73pF @ 25V |
| Package / Case | TO-243AA |
| Current - Continuous Drain (Id) @ 25°C | 205mA Ta |
| Number of Pins | 4 |
| Weight | 130.492855mg |
| Gate Charge (Qg) (Max) @ Vgs | 3.45nC @ 10V |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Rise Time | 3.78ns |
| Packaging | Tape & Reel (TR) |
| Drain to Source Voltage (Vdss) | 250V |
| Published | 2001 |
| JESD-609 Code | e3 |
| Drive Voltage (Max Rds On,Min Rds On) | 3.5V 10V |