| Parameters | |
|---|---|
| Number of Pins | 3 | 
| Fall Time (Typ) | 8 ns | 
| Turn-Off Delay Time | 8 ns | 
| Continuous Drain Current (ID) | 160mA | 
| Weight | 453.59237mg | 
| Threshold Voltage | -3.5V | 
| Gate to Source Voltage (Vgs) | 20V | 
| Transistor Element Material | SILICON | 
| Drain to Source Breakdown Voltage | -60V | 
| Operating Temperature | -55°C~150°C TJ | 
| Feedback Cap-Max (Crss) | 8 pF | 
| Height | 450μm | 
| Packaging | Bulk | 
| Length | 1.6mm | 
| Width | 800μm | 
| Published | 2006 | 
| Radiation Hardening | No | 
| REACH SVHC | Yes | 
| RoHS Status | ROHS3 Compliant | 
| Tolerance | 1% | 
| JESD-609 Code | e3 | 
| Lead Free | Lead Free | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Resistance | 470kOhm | 
| Terminal Finish | Matte Tin (Sn) | 
| Voltage - Rated | 75V | 
| Subcategory | Other Transistors | 
| Power Rating | 100mW | 
| Voltage - Rated DC | -60V | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | BOTTOM | 
| Terminal Form | WIRE | 
| Peak Reflow Temperature (Cel) | 260 | 
| Current Rating | -160mA | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Pin Count | 3 | 
| Case Code (Metric) | 1608 | 
| Case Code (Imperial) | 0603 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 625mW Ta | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 625mW | 
| Turn On Delay Time | 8 ns | 
| FET Type | P-Channel | 
| Factory Lead Time | 17 Weeks | 
| Rds On (Max) @ Id, Vgs | 14 Ω @ 200mA, 10V | 
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | 
| Mount | Surface Mount | 
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 18V | 
| Mounting Type | Through Hole | 
| Current - Continuous Drain (Id) @ 25°C | 160mA Ta | 
| Rise Time | 8ns | 
| Drain to Source Voltage (Vdss) | 60V | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | 
| Vgs (Max) | ±20V |