ZVP2110GTA
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 310mA Ta |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 310mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -100V |
| Pulsed Drain Current-Max (IDM) | 3A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 8Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | -100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -350mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8 Ω @ 375mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
See Relate Datesheet