ZVP2110A
| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Reference Standard | CECC |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 700mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 700mW |
| Factory Lead Time | 17 Weeks |
| Turn On Delay Time | 7 ns |
| Mount | Through Hole |
| FET Type | P-Channel |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Transistor Application | SWITCHING |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Rds On (Max) @ Id, Vgs | 8 Ω @ 375mA, 10V |
| Operating Temperature | -55°C~150°C TJ |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
| Packaging | Bulk |
| Published | 2006 |
| Current - Continuous Drain (Id) @ 25°C | 230mA Ta |
| JESD-609 Code | e3 |
| Rise Time | 15ns |
| Pbfree Code | yes |
| Drain to Source Voltage (Vdss) | 100V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Number of Terminations | 3 |
| Fall Time (Typ) | 15 ns |
| ECCN Code | EAR99 |
| Resistance | 8Ohm |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 230mA |
| Terminal Finish | Matte Tin (Sn) |
| Threshold Voltage | -3.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Subcategory | Other Transistors |
| Drain to Source Breakdown Voltage | -100V |
| Voltage - Rated DC | -100V |
| Height | 4.01mm |
| Technology | MOSFET (Metal Oxide) |
| Length | 4.77mm |
| Width | 2.41mm |
| Terminal Position | BOTTOM |
| Radiation Hardening | No |
| Terminal Form | WIRE |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Peak Reflow Temperature (Cel) | 260 |
| Lead Free | Lead Free |
| Current Rating | -230mA |
See Relate Datesheet