| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Weight | 14.996898mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 8.5Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Voltage - Rated DC | 250V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 230mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.1W |
| Turn On Delay Time | 1.25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 72pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 230mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.65nC @ 10V |
| Rise Time | 1.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.4V 10V |
| Vgs (Max) | ±40V |
| Fall Time (Typ) | 1.7 ns |
| Turn-Off Delay Time | 11.4 ns |
| Continuous Drain Current (ID) | 230mA |
| Threshold Voltage | 1.4V |
| Gate to Source Voltage (Vgs) | 40V |
| Drain Current-Max (Abs) (ID) | 0.23A |
| Drain to Source Breakdown Voltage | 250V |
| Nominal Vgs | 1.4 V |
| Height | 1.3mm |
| Length | 3.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |