| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 240V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 260mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 750mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 750mW |
| Turn On Delay Time | 2.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 260mA Ta |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±40V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 260mA |
| Gate to Source Voltage (Vgs) | 40V |
| Drain Current-Max (Abs) (ID) | 0.26A |
| Drain-source On Resistance-Max | 6Ohm |
| Drain to Source Breakdown Voltage | 240V |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |