VS-MBR1100TR
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Terminal Form | WIRE |
| Base Part Number | MBR1100 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 500μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 1A |
| Case Connection | ISOLATED |
| Forward Current | 1A |
| Max Reverse Leakage Current | 500μA |
| Operating Temperature - Junction | -40°C~150°C |
| Max Surge Current | 200A |
| Output Current-Max | 1A |
| Forward Voltage | 850mV |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 1A |
| Peak Reverse Current | 500μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Capacitance @ Vr, F | 35pF @ 5V 1MHz |
| Peak Non-Repetitive Surge Current | 200A |
| Max Forward Surge Current (Ifsm) | 200A |
| Natural Thermal Resistance | 80 °C/W |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet