VS-GB100DA60UP

VS-GB100DA60UP

VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125 A, 2.4 V, 447 W, 600 V, SOT-227


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GB100DA60UP
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 970
  • Description: VISHAY VS-GB100DA60UP IGBT Array & Module Transistor, NPN, 125 A, 2.4 V, 447 W, 600 V, SOT-227 (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 447W
Polarity NPN
Configuration Single
Power - Max 447W
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 125A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 100A
NTC Thermistor No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

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