VS-GA200SA60UP

VS-GA200SA60UP

VISHAY VS-GA200SA60UP. IGBT Array & Module Transistor, N Channel, 200 A, 1.6 V, 500 W, 600 V, ISOTOP


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GA200SA60UP
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 426
  • Description: VISHAY VS-GA200SA60UP. IGBT Array & Module Transistor, N Channel, 200 A, 1.6 V, 500 W, 600 V, ISOTOP (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2014
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL APPROVED, LOW CONDUCTION LOSS
Max Power Dissipation 500W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 1
Configuration Single
Power Dissipation 500W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Rise Time 75ns
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Input Capacitance 16.5nF
Turn On Time 131 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
Turn Off Time-Nom (toff) 620 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 16.5nF @ 30V
Height 12.3mm
Length 38.3mm
Width 25.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

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