VS-8EWS12STRPBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 8EWS12 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Common Anode |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 50μA @ 1200V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A |
| Case Connection | CATHODE |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 200A |
| Output Current-Max | 8A |
| Application | HIGH VOLTAGE |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Forward Voltage | 1.1V |
| Max Reverse Voltage (DC) | 1.2kV |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Peak Reverse Current | 50μA |
| JEDEC-95 Code | TO-252AA |
| Peak Non-Repetitive Surge Current | 200A |
| Non-rep Pk Forward Current-Max | 150A |
| Reverse Voltage | 1.2kV |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet