VS-10ETS08-M3
| Parameters | |
|---|---|
| Min Operating Temperature | -40°C |
| HTS Code | 8541.10.00.80 |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Number of Elements | 1 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 50μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 10A |
| Forward Current | 10A |
| Operating Temperature - Junction | -40°C~150°C |
| Application | HIGH VOLTAGE |
| Forward Voltage | 1.1V |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 10A |
| Number of Phases | 1 |
| Peak Reverse Current | 50μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Peak Non-Repetitive Surge Current | 200A |
| Max Forward Surge Current (Ifsm) | 200A |
| Height | 9.02mm |
| Length | 10.66mm |
| Width | 4.82mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Max Operating Temperature | 150°C |
See Relate Datesheet