Parameters | |
---|---|
Factory Lead Time | 9 Weeks |
Mount | Surface Mount, Through Hole |
Mounting Type | Surface Mount |
Package / Case | TO-78-6 Metal Can |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW NOISE |
HTS Code | 8541.21.00.95 |
Subcategory | FET General Purpose Small Signal |
Max Power Dissipation | 500mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | O-MBCY-W7 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | DEPLETION MODE |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
Breakdown Voltage | -35V |
Gate to Source Voltage (Vgs) | -25V |
FET Technology | JUNCTION |
Feedback Cap-Max (Crss) | 2.5 pF |
Highest Frequency Band | VERY HIGH FREQUENCY B |
Current - Drain (Idss) @ Vds (Vgs=0) | 12mA @ 10V |
Voltage - Cutoff (VGS off) @ Id | 1V @ 1nA |
Voltage - Breakdown (V(BR)GSS) | 25V |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |