| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Packaging | Bulk |
| Published | 2010 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 2W |
| Pin Count | 3 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 2W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 23A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 250 ns |
| Test Condition | 300V, 10A, 30 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 360 ns |
| IGBT Type | NPT |
| Gate Charge | 63nC |
| Current - Collector Pulsed (Icm) | 92A |
| Td (on/off) @ 25°C | 43ns/175ns |
| Gate-Emitter Thr Voltage-Max | 6V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |