TCST1103
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Silver, Tin |
| Mount | PCB, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | Slotted Module, 4-Lead Dual Row |
| Number of Pins | 4 |
| Operating Temperature | -55°C~85°C |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 1.25V |
| Max Power Dissipation | 250mW |
| Output Voltage | 70V |
| Max Output Current | 100mA |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 250mW |
| Output Current | 4mA |
| Turn On Delay Time | 10 μs |
| Forward Current | 60mA |
| Response Time | 10μs, 8μs |
| Rise Time | 10s |
| Forward Voltage | 1.25V |
| Fall Time (Typ) | 8 s |
| Turn-Off Delay Time | 8 μs |
| Collector Emitter Voltage (VCEO) | 70V |
| Max Collector Current | 4mA |
| Sensing Distance | 0.122 (3.1mm) |
| Collector Emitter Breakdown Voltage | 70V |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Current - Collector (Ic) (Max) | 4mA |
| Reverse Breakdown Voltage | 6V |
| Wavelength | 950 nm |
| Sensing Method | Through-Beam |
| Collector Emitter Saturation Voltage | 400mV |
| Current - DC Forward (If) (Max) | 60mA |
| Input Current | 60mA |
| Max Junction Temperature (Tj) | 100°C |
| Reverse Voltage (DC) | 6V |
| Ambient Temperature Range High | 85°C |
| Current Transfer Ratio | 20 % |
| Height | 11.1mm |
| Length | 11.9mm |
| Width | 6.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet