SUD40N10-25-E3
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Ta 136W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Mount | Surface Mount |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 40A, 10V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Operating Temperature | -55°C~175°C TJ |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Packaging | Tape & Reel (TR) |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 40A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-252AA |
| Published | 2014 |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Series | TrenchFET® |
| Pulsed Drain Current-Max (IDM) | 70A |
| Avalanche Energy Rating (Eas) | 80 mJ |
| Nominal Vgs | 3 V |
| JESD-609 Code | e3 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Pbfree Code | yes |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 25mOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
See Relate Datesheet