 
    | Parameters | |
|---|---|
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | 150°C TJ | 
| Packaging | Tape & Box (TB) | 
| JESD-609 Code | e3 | 
| Pbfree Code | yes | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Matte Tin (Sn) | 
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 0.0067 | 
| Subcategory | Other Transistors | 
| Max Power Dissipation | 1.2W | 
| Terminal Position | BOTTOM | 
| Terminal Form | WIRE | 
| Base Part Number | STX117 | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Power Dissipation | 800mW | 
| Power - Max | 1.2W | 
| Transistor Application | SWITCHING | 
| Polarity/Channel Type | PNP | 
| Transistor Type | PNP | 
| Collector Emitter Voltage (VCEO) | 100V | 
| Max Collector Current | 2A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 4V | 
| Current - Collector Cutoff (Max) | 2mA | 
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A | 
| Collector Emitter Breakdown Voltage | 100V | 
| Collector Emitter Saturation Voltage | 2.5V | 
| Collector Base Voltage (VCBO) | 100V | 
| Emitter Base Voltage (VEBO) | 5V | 
| hFE Min | 500 | 
| Height | 4.5mm | 
| Length | 4.8mm | 
| Width | 3.8mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant |