STW56N60M2
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ M2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STW56N |
| Number of Channels | 1 |
| Power Dissipation-Max | 350W Tc |
| Element Configuration | Single |
| Power Dissipation | 350W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3750pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 52A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Turn-Off Delay Time | 119 ns |
| Continuous Drain Current (ID) | 52A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 600V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 24.45mm |
| Length | 15.75mm |
| Width | 5.15mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet