STW23NM50N
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Rise Time | 19ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 71 ns |
| Continuous Drain Current (ID) | 17A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 25V |
| Pulsed Drain Current-Max (IDM) | 68A |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 254 mJ |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 190mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Base Part Number | STW23N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125W |
| Turn On Delay Time | 6.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
See Relate Datesheet