STS6NF20V
| Parameters | |
|---|---|
| Base Part Number | STS6N |
| Drain-source On Resistance-Max | 0.045Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pin Count | 8 |
| Pulsed Drain Current-Max (IDM) | 24A |
| Number of Elements | 1 |
| Height | 1.25mm |
| Power Dissipation-Max | 2.5W Tc |
| Length | 5mm |
| Width | 4mm |
| Element Configuration | Single |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Operating Mode | ENHANCEMENT MODE |
| RoHS Status | ROHS3 Compliant |
| Power Dissipation | 2.5W |
| Lead Free | Lead Free |
| Turn On Delay Time | 7 ns |
| Factory Lead Time | 12 Weeks |
| FET Type | N-Channel |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Transistor Application | SWITCHING |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 3A, 4.5V |
| Number of Pins | 8 |
| Vgs(th) (Max) @ Id | 600mV @ 250μA |
| Transistor Element Material | SILICON |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ II |
| JESD-609 Code | e4 |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Part Status | Active |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 4.5V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Rise Time | 33ns |
| ECCN Code | EAR99 |
| Drive Voltage (Max Rds On,Min Rds On) | 1.95V 4.5V |
| Vgs (Max) | ±12V |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Fall Time (Typ) | 10 ns |
| Technology | MOSFET (Metal Oxide) |
| Turn-Off Delay Time | 27 ns |
| Terminal Position | DUAL |
| Continuous Drain Current (ID) | 6A |
| Terminal Form | GULL WING |
| Threshold Voltage | 600mV |
| Gate to Source Voltage (Vgs) | 12V |
| Peak Reflow Temperature (Cel) | 260 |
| Drain Current-Max (Abs) (ID) | 6A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
See Relate Datesheet