STS5PF30L
| Parameters | |
|---|---|
| Series | STripFET™ |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 55mOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STS5P |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 25 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 125 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Height | 1.65mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
See Relate Datesheet