STQ2HNK60ZR-AP
| Parameters | |
|---|---|
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.8 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 500mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Pulsed Drain Current-Max (IDM) | 2A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 120 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Base Part Number | STQ2 |
| Pin Count | 3 |
| Number of Elements | 1 |
See Relate Datesheet