STP70N10F4
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 19.5mOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP70N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 150W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 19.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 65A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 65 ns |
| Continuous Drain Current (ID) | 65A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 260A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet