STP6N80K5
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 255pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Continuous Drain Current (ID) | 4.5A |
| JEDEC-95 Code | TO-220AB |
| Pulsed Drain Current-Max (IDM) | 18A |
| DS Breakdown Voltage-Min | 800V |
| Avalanche Energy Rating (Eas) | 85 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH5™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Base Part Number | STP6N |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 85W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet