STP16N65M5
| Parameters | |
|---|---|
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 299mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP16N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 90W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 90W |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 299m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Rise Time | 9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 48A |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Height | 9.15mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ V |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet