| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ VI |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STP105 |
| Configuration | Single |
| Power Dissipation-Max | 140W Tc |
| Power Dissipation | 140W |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 4.5V |
| Rise Time | 91ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 23.4 ns |
| Turn-Off Delay Time | 24.5 ns |
| Continuous Drain Current (ID) | 150A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |