 
    | Parameters | |
|---|---|
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 3.3W | 
| Case Connection | DRAIN | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 500mA, 10V | 
| Vgs(th) (Max) @ Id | 3V @ 250μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 1A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 10V | 
| Rise Time | 2ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V | 
| Vgs (Max) | ±20V | 
| Fall Time (Typ) | 10.4 ns | 
| Continuous Drain Current (ID) | 1A | 
| Threshold Voltage | 2V | 
| Gate to Source Voltage (Vgs) | 20V | 
| Drain Current-Max (Abs) (ID) | 1A | 
| Drain to Source Breakdown Voltage | 200V | 
| Pulsed Drain Current-Max (IDM) | 4A | 
| Max Junction Temperature (Tj) | 150°C | 
| Height | 1.9mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 12 Weeks | 
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-261-4, TO-261AA | 
| Number of Pins | 4 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Series | STripFET™ II | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Resistance | 1.5Ohm | 
| Terminal Finish | Matte Tin (Sn) | 
| Subcategory | FET General Purpose Powers | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | DUAL | 
| Terminal Form | GULL WING | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 30 | 
| Base Part Number | STN4N | 
| Pin Count | 4 | 
| Number of Elements | 1 | 
| Number of Channels | 1 | 
| Power Dissipation-Max | 3.3W Tc |