STL60P4LLF6
| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Cut Tape (CT) |
| Series | STripFET™ F6 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STL60 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 100W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 49.4 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 3525pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 170 ns |
| Continuous Drain Current (ID) | 60A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.019Ohm |
| Pulsed Drain Current-Max (IDM) | 240A |
| DS Breakdown Voltage-Min | 40V |
| Height | 950μm |
| Length | 6.35mm |
| Width | 5.4mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet