STL26NM60N
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | MDmesh™ II |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 185MOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Base Part Number | STL26 |
| Pin Count | 5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 125mW Ta 3W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 185m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Ta 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 85 ns |
| Continuous Drain Current (ID) | 19A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 600V |
| Avalanche Energy Rating (Eas) | 400 mJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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