STL19N65M5
| Parameters | |
|---|---|
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | MDmesh™ V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 215mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STL19 |
| JESD-30 Code | S-PSSO-N4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.8W Ta 90W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 36 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 240m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A Ta 12.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 12.5A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 710V |
| Pulsed Drain Current-Max (IDM) | 50A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
See Relate Datesheet