| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 11.7Ohm |
| Additional Feature | ULTRA LOW-ON RESISTANCE |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Base Part Number | STL10 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 50W |
| Turn On Delay Time | 4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 19m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 4.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±22V |
| Fall Time (Typ) | 3.5 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 9A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 22V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 36A |
| Avalanche Energy Rating (Eas) | 150 mJ |
| Nominal Vgs | 1 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |