STGY50NC60WD
| Parameters | |
|---|---|
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 278W |
| Base Part Number | STGY50 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 260W |
| Input Type | Standard |
| Turn On Delay Time | 52 ns |
| Power - Max | 278W |
| Transistor Application | POWER CONTROL |
| Rise Time | 17ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 240 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 110A |
| Reverse Recovery Time | 55 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 69 ns |
| Test Condition | 390V, 40A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 271 ns |
| Gate Charge | 195nC |
| Current - Collector Pulsed (Icm) | 180A |
| Td (on/off) @ 25°C | 52ns/240ns |
| Switching Energy | 365μJ (on), 560μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Height | 20.3mm |
| Length | 15.9mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 247 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
See Relate Datesheet