STGWT80H65DFB
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 32 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.756003g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 469W |
| Base Part Number | STGWT80 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 469W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 120A |
| Reverse Recovery Time | 85 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
| Test Condition | 400V, 80A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 414nC |
| Current - Collector Pulsed (Icm) | 240A |
| Td (on/off) @ 25°C | 84ns/280ns |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
See Relate Datesheet