STGWT20V60DF
| Parameters | |
|---|---|
| Factory Lead Time | 32 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 167W |
| Base Part Number | STGWT20 |
| Element Configuration | Single |
| Power Dissipation | 167W |
| Input Type | Standard |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| Reverse Recovery Time | 40ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.3V |
| Test Condition | 400V, 20A, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 116nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 38ns/149ns |
| Switching Energy | 200μJ (on), 130μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Height | 26.7mm |
| Length | 15.7mm |
| Width | 5.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet