STGWS38IH130D
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 180W |
| Base Part Number | STGW38 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 180W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.3kV |
| Max Collector Current | 55A |
| Collector Emitter Breakdown Voltage | 1.3kV |
| Voltage - Collector Emitter Breakdown (Max) | 1300V |
| Test Condition | 960V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 740 ns |
| Gate Charge | 127nC |
| Current - Collector Pulsed (Icm) | 125A |
| Td (on/off) @ 25°C | -/284ns |
| Switching Energy | 3.4mJ (off) |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet