STGWA25H120F2
| Parameters | |
|---|---|
| Factory Lead Time | 32 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 375W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGWA25 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Input Type | Standard |
| Power - Max | 375W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 50A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 41 ns |
| Test Condition | 600V, 25A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 339 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 100nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 29ns/130ns |
| Switching Energy | 600μJ (on), 700μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet