STGW50H60DF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 360W |
| Base Part Number | STGW50 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Turn On Delay Time | 62 ns |
| Power - Max | 360W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 205 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 100A |
| Reverse Recovery Time | 55 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Turn On Time | 91 ns |
| Test Condition | 400V, 50A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 285 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 217nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 62ns/178ns |
| Switching Energy | 890μJ (on), 860μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet