STGP3NC120HD
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 75W |
| Base Part Number | STGP3 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | GENERAL PURPOSE SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 14A |
| Reverse Recovery Time | 51 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.2V |
| Max Breakdown Voltage | 1.2kV |
| Turn On Time | 18.5 ns |
| Test Condition | 800V, 3A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Turn Off Time-Nom (toff) | 680 ns |
| Gate Charge | 24nC |
| Current - Collector Pulsed (Icm) | 20A |
| Td (on/off) @ 25°C | 15ns/118ns |
| Switching Energy | 236μJ (on), 290μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet