STGP30H60DFB
| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 260W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STGP30 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 260W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 53 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 51.1 ns |
| Test Condition | 400V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 223 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 149nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 37ns/146ns |
| Switching Energy | 383μJ (on), 293μJ (off) |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet