STGF7NC60HD
| Parameters | |
|---|---|
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 25.5 ns |
| Test Condition | 390V, 7A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A |
| Turn Off Time-Nom (toff) | 221 ns |
| Gate Charge | 35nC |
| Current - Collector Pulsed (Icm) | 50A |
| Td (on/off) @ 25°C | 18.5ns/72ns |
| Switching Energy | 95μJ (on), 115μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.75V |
| Height | 9.3mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 25W |
| Current Rating | 6A |
| Base Part Number | STGF7 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 25W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 18.5 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 8.5ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 72 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 10A |
| Reverse Recovery Time | 37 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
See Relate Datesheet